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Title: Field-assisted bonding of single crystal quartz

Abstract

A technique to produce strong, hermetic bonds between plates of single crystal quartz using a modified field-assisted bonding process is presented. Field-assisted bonding is a technique traditionally used to join glass to metals at temperatures well below normal glass softening temperatures. To promote reactivity between quartz within an electrical field at temperatures well below quartz transformation temperatures, thin films of silicon metal and glass were vapor deposited onto adjacent quartz plates. Thermal stresses caused by expansion mismatch between the quartz and the films were of concern. These stresses were reduced by determining the minimum film thicknesses capable of yielding sufficient reactivity for bonding. Processing studies were conducted to optimize bond integrity, and bonds were characterized by hermeticity, thermal shock, and mechanical shock. Packages produced under the most ideal conditions were able to survive greater than 1000 psi shock loads. 11 refs., 10 figs., 3 tabs.

Authors:
; ; ; ;
Publication Date:
Research Org.:
Sandia National Labs., Albuquerque, NM (USA)
OSTI Identifier:
5828069
Report Number(s):
SAND-89-0814C; CONF-8908132-1
ON: DE89015407
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Conference
Resource Relation:
Conference: 11. quartz devices conference, Kansas City, MO, USA, 28-31 Aug 1989; Other Information: Portions of this document are illegible in microfiche products
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; METALS; BONDING; QUARTZ; CRYSTALS; ELECTRIC FIELDS; GLASS; IMPACT SHOCK; SHEAR; SILICON; THERMAL SHOCK; THICKNESS; THIN FILMS; CHALCOGENIDES; DIMENSIONS; ELEMENTS; FABRICATION; FILMS; JOINING; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS; SILICON OXIDES; 360601* - Other Materials- Preparation & Manufacture

Citation Formats

Watkins, R D, Tuthill, C D, Curlee, R M, Koehler, D R, and Joerg, C F. Field-assisted bonding of single crystal quartz. United States: N. p., 1989. Web.
Watkins, R D, Tuthill, C D, Curlee, R M, Koehler, D R, & Joerg, C F. Field-assisted bonding of single crystal quartz. United States.
Watkins, R D, Tuthill, C D, Curlee, R M, Koehler, D R, and Joerg, C F. Sun . "Field-assisted bonding of single crystal quartz". United States.
@article{osti_5828069,
title = {Field-assisted bonding of single crystal quartz},
author = {Watkins, R D and Tuthill, C D and Curlee, R M and Koehler, D R and Joerg, C F},
abstractNote = {A technique to produce strong, hermetic bonds between plates of single crystal quartz using a modified field-assisted bonding process is presented. Field-assisted bonding is a technique traditionally used to join glass to metals at temperatures well below normal glass softening temperatures. To promote reactivity between quartz within an electrical field at temperatures well below quartz transformation temperatures, thin films of silicon metal and glass were vapor deposited onto adjacent quartz plates. Thermal stresses caused by expansion mismatch between the quartz and the films were of concern. These stresses were reduced by determining the minimum film thicknesses capable of yielding sufficient reactivity for bonding. Processing studies were conducted to optimize bond integrity, and bonds were characterized by hermeticity, thermal shock, and mechanical shock. Packages produced under the most ideal conditions were able to survive greater than 1000 psi shock loads. 11 refs., 10 figs., 3 tabs.},
doi = {},
url = {https://www.osti.gov/biblio/5828069}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1989},
month = {1}
}

Conference:
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