Method of bonding single crystal quartz by field-assisted bonding
The method of producing a hermetic stable structural bond between quartz crystals includes providing first and second quartz crystals and depositing thin films of borosilicate glass and silicon on portions of the first and second crystals, respectively. The portions of the first and second crystals are then juxtaposed in a surface contact relationship and heated to a temperature for a period sufficient to cause the glass and silicon films to become electrically conductive. An electrical potential is then applied across the first and second crystals for creating an electrostatic field between the adjoining surfaces and causing the juxtaposed portions to be attracted into an intimate contact and form a bond for joining the adjoining surfaces of the crystals. 2 figures.
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- Dept. of Energy, Washington, DC (United States)
- Patent Number(s):
- US 5009690; A
- Application Number:
- PPN: US 7-490895
- OSTI ID:
- 7028470
- Country of Publication:
- United States
- Language:
- English
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