Controlled ion implant damage profile for etching

Patent · Mon Jan 01 00:00:00 EST 1990

OSTI ID:867648

Ashby, Carol I. H. ^[1]; Brannon, Paul J ^[2]

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1. Edgewood, NM
2. Albuquerque, NM

A process for etching a material such as LiNbO.sub.3 by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4978418
• OSTI ID: 867648
• Country of Publication: United States
• Language: English

Related Subjects

controlled
implant
damage
profile
etching
process
material
linbo
implanting
plurality
kinetic
energies
etched
contacting
implanted
etchant
various
selected
produce
substantially
uniformly
throughout
entire
depth
zone
tailoring
vertical
damaged
substantially uniformly
substantially uniform
uniformly throughout
kinetic energies
various energies
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