Controlled ion implant damage profile for etching

Patent · Tue Dec 18 00:00:00 EST 1990

OSTI ID:7020413

Arnold, Jr, G W; Ashby, C I.H.; Brannon, P J

A process is disclosed for etching a material such as LiNbO[sub 3] by implanting ions having a plurality of different kinetic energies in an area to be etched, and then contacting the ion implanted area with an etchant. The various energies of the ions are selected to produce implant damage substantially uniformly throughout the entire depth of the zone to be etched, thus tailoring the vertical profile of the damaged zone.

• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): US 4978418; A
• Application Number: PPN: US 7-233511
• OSTI ID: 7020413
• Resource Relation: Patent File Date: 18 Aug 1988
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LITHIUM COMPOUNDS
ETCHING
ION IMPLANTATION
NIOBATES
PHYSICAL RADIATION EFFECTS
ALKALI METAL COMPOUNDS
NIOBIUM COMPOUNDS
OXYGEN COMPOUNDS
RADIATION EFFECTS
REFRACTORY METAL COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
360601* - Other Materials- Preparation & Manufacture
360605 - Materials- Radiation Effects