Control of etching of LiNbO/sub 3/ by implant damage profile tailoring

Conference · Thu Jan 01 00:00:00 EST 1987

OSTI ID:5848688

Brannon, P J; Ashby, C I.H.; Arnold, G W

Damage-profile tailoring using multi-energy ion implants produced smooth side walls and deeper etched features with ion-bombardment-enhanced wet etching of LiNbO/sub 3/ than was possible with a single-energy implant. High ion fluences produced buried microcracks which may contribute to propagation losses commonly observed in ion-implanted waveguides. 5 refs., 6 figs., 1 tab.

• Research Organization: Sandia National Labs., Albuquerque, NM (USA)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5848688
• Report Number(s): SAND-87-1488C; CONF-871124-13; ON: DE88003211
• Resource Relation: Conference: Fall meeting of the Materials Research Society, Boston, MA, USA, 30 Nov 1987; Other Information: Portions of this document are illegible in microfiche products
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
LITHIUM COMPOUNDS
ETCHING
ION IMPLANTATION
NIOBATES
COMPARATIVE EVALUATIONS
CRACKS
DAMAGE
HELIUM IONS
MICROSTRUCTURE
PHYSICAL RADIATION EFFECTS
WAVEGUIDES
ALKALI METAL COMPOUNDS
CHARGED PARTICLES
CRYSTAL STRUCTURE
IONS
NIOBIUM COMPOUNDS
OXYGEN COMPOUNDS
RADIATION EFFECTS
REFRACTORY METAL COMPOUNDS
SURFACE FINISHING
TRANSITION ELEMENT COMPOUNDS
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies
360206 - Ceramics
Cermets
& Refractories- Radiation Effects