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Method and making group IIB metal - telluride films and solar cells

Patent ·
OSTI ID:867501
 [1];  [2]
  1. Redondo Beach, CA
  2. Northridge, CA
+ Show Author Affiliations

A technique is disclosed forming thin films (13) of group IIB metal-telluride, such as Cd.sub.x Zn.sub.1-x Te (0.ltoreq.x.ltoreq.1), on a substrate (10) which comprises depositing Te (18) and at least one of the elements (19) of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film (12) and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed.

Assignee:
International Solar Electric Technology, Inc. (Inglewood, CA)
Patent Number(s):
US 4950615
Application Number:
07/306,469
OSTI ID:
867501
Country of Publication:
United States
Language:
English

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