Electrodeposited doped II-VI semiconductor films and devices incorporating such films
This patent describes a photovoltaic device. It comprises: a first thin film of a compound semiconductor of a first conductivity type including tellurium and a metal selected from Group IIB of the Periodic Table of Elements and containing as a dopant impurity in a concentration not exceeding 10{sup 20} atoms per cubic centimeter a metal selected from Group IB, a second semiconductor thin film in contact with the first semiconductor thin film and having a second conductivity type opposite that of the first conductivity type and electrical contacts to each of the first and second semiconductor thin films. Also described is the device wherein the first thin film is p-type cadmium telluride.
- Assignee:
- Standard Oil Co., Cleveland, OH
- Patent Number(s):
- US 4909857; A
- Application Number:
- PPN: US 7-287930A
- OSTI ID:
- 6723289
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CADMIUM COMPOUNDS
CADMIUM TELLURIDE SOLAR CELLS
CADMIUM TELLURIDES
CHALCOGENIDES
DEPOSITION
DIRECT ENERGY CONVERTERS
ELECTRODEPOSITION
ELECTROLYSIS
EQUIPMENT
FABRICATION
FILMS
LYSIS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
TELLURIDES
TELLURIUM COMPOUNDS
THIN FILMS