Method and making group IIB metal - telluride films and solar cells

Patent · Tue Aug 21 00:00:00 EDT 1990

OSTI ID:7023536

Basol, B M; Kapur, V K

A technique is disclosed for forming thin films of group IIB metal-telluride, such as Cd[sub x]Zn[sub 1[minus]x]Te (0 [<=] x [<=] 1), on a substrate which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate and then heating the elements to form the telluride. A technique is also provided for doping this material by chemically forming a thin layer of a dopant on the surface of the unreacted elements and then heating the elements along with the layer of dopant. A method is disclosed of fabricating a thin film photovoltaic cell which comprises depositing Te and at least one of the elements of Cd, Zn, and Hg onto a substrate which contains on its surface a semiconductor film and then heating the elements in the presence of a halide of the Group IIB metals, causing the formation of solar cell grade Group IIB metal-telluride film and also causing the formation of a rectifying junction, in situ, between the semiconductor film on the substrate and the Group IIB metal-telluride layer which has been formed. 5 figs.

• Assignee: International Solar Electric Technology, Inc., Inglewood, CA (United States)
• Patent Number(s): US 4950615; A
• Application Number: CNN: XL-7-06074-2; PPN: US 7-306469
• OSTI ID: 7023536
• Resource Relation: Patent File Date: 6 Feb 1989
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
CADMIUM TELLURIDE SOLAR CELLS
FABRICATION
CADMIUM TELLURIDES
SYNTHESIS
MERCURY TELLURIDES
SOLAR CELLS
ZINC TELLURIDES
DEPOSITION
CADMIUM COMPOUNDS
CHALCOGENIDES
DIRECT ENERGY CONVERTERS
EQUIPMENT
MERCURY COMPOUNDS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR EQUIPMENT
TELLURIDES
TELLURIUM COMPOUNDS
ZINC COMPOUNDS
140501* - Solar Energy Conversion- Photovoltaic Conversion
360601 - Other Materials- Preparation &amp; Manufacture