Substrate solder barriers for semiconductor epilayer growth

Patent · Sat Dec 31 23:00:00 EST 1988

OSTI ID:866955

Drummond, Timothy J ^[1]; Ginley, David S ^[2]; Zipperian, Thomas E ^[2]

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1. Tijeras, NM
2. Albuquerque, NM

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4829020
• OSTI ID: 866955
• Country of Publication: United States
• Language: English

Related Subjects

/117/148/228/428/438/
addition
barriers
beam
beam epitaxy
carbide
cleaning
coating
compatible
compound
compound semiconductor
compound semiconductors
diameter
difficult
distribution
drawbacks
energy
epilayer
epilayers
epitaxial
epitaxy
etchants
gold
growth
heating
indium
inert
layer
method
modular
mounted
mounting
overcome
processes
provides
provides uniform
quality
quality semiconductor
radiant
radiant heat
reacts
semiconductor
semiconductor epilayer
semiconductor epilayers
semiconductors
solder
sputter
sputter coating
standard
substrate
substrates
successfully
support
tungsten
tungsten carbide
typically
uniform
uniform distribution
uniformly
wet