Substrate solder barriers for semiconductor epilayer growth

Patent · Sun Jan 01 00:00:00 EST 1989

OSTI ID:866955

Drummond, Timothy J ^[1]; Ginley, David S ^[2]; Zipperian, Thomas E ^[2]

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1. Tijeras, NM
2. Albuquerque, NM

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4829020
• OSTI ID: 866955
• Country of Publication: United States
• Language: English

Related Subjects

substrate
solder
barriers
semiconductor
epilayer
growth
compound
semiconductors
epitaxial
processes
substrates
typically
mounted
support
modular
beam
epitaxy
mounting
indium
method
drawbacks
reacts
difficult
uniformly
wet
diameter
successfully
overcome
sputter
coating
layer
tungsten
carbide
gold
addition
compatible
quality
epilayers
inert
standard
cleaning
etchants
provides
uniform
distribution
energy
radiant
heating
provides uniform
tungsten carbide
compound semiconductors
compound semiconductor
sputter coating
uniform distribution
beam epitaxy
radiant heat
semiconductor epilayers
quality semiconductor
semiconductor epilayer
/117/148/228/428/438/