Substrate solder barriers for semiconductor epilayer growth

Patent · Tue May 09 04:00:00 EDT 1989

OSTI ID:7267913

Drummond, T J; Ginley, D S; Zipperian, T E

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

• DOE Contract Number: AC04-76DP00789
• Assignee: Dept. of Energy, Washington, DC (United States)
• Patent Number(s): A; US 4829020
• Application Number: PPN: US 7-111488
• OSTI ID: 7267913
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
CARBIDES
CARBON COMPOUNDS
COATINGS
COMPATIBILITY
ELEMENTS
EPITAXY
FABRICATION
FILLER METALS
GOLD
INDIUM
JOINING
MATERIALS
MECHANICAL STRUCTURES
METALS
MOLECULAR BEAM EPITAXY
PROTECTIVE COATINGS
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR MATERIALS
SOLDERING
SUBSTRATES
SUPPORTS
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN CARBIDES
TUNGSTEN COMPOUNDS
WELDING