Substrate solder barriers for semiconductor epilayer growth
During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (USA)
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- SNL; EDB-88-179048
- Patent Number(s):
- PATENTS-US-A6111488
- OSTI ID:
- 6808290
- Country of Publication:
- United States
- Language:
- English
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42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ARSENIC COMPOUNDS
ARSENIDES
CARBIDES
CARBON COMPOUNDS
COATINGS
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GOLD
INDIUM
INVENTIONS
LAYERS
MATERIALS
METALS
MOLECULAR BEAM EPITAXY
PNICTIDES
PROTECTIVE COATINGS
REFRACTORY METAL COMPOUNDS
SEMICONDUCTOR MATERIALS
SPUTTERING
TRANSITION ELEMENT COMPOUNDS
TRANSITION ELEMENTS
TUNGSTEN CARBIDES
TUNGSTEN COMPOUNDS