Process for obtaining multiple sheet resistances for thin film hybrid microcircuit resistors

Patent · Sun Jan 01 00:00:00 EST 1989

OSTI ID:866838

Norwood, David P ^[1]

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1. Albuquerque, NM

A standard thin film circuit containing Ta.sub.2 N (100 ohms/square) resirs is fabricated by depositing on a dielectric substrate successive layers of Ta.sub.2 N, Ti and Pd, with a gold layer to provide conductors. The addition of a few simple photoprocessing steps to the standeard TFN manufacturing process enables the formation of Ta.sub.2 N+Ti (10 ohms/square) and Ta.sub.2 N+Ti+Pd (1 ohm/square) resistors in the same otherwise standard thin film circuit structure.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by Department of Energy (Washington, DC)
• Patent Number(s): US 4801469
• OSTI ID: 866838
• Country of Publication: United States
• Language: English

Related Subjects

process
obtaining
multiple
sheet
resistances
film
hybrid
microcircuit
resistors
standard
circuit
containing
100
ohms
square
resirs
fabricated
depositing
dielectric
substrate
successive
layers
pd
gold
layer
provide
conductors
addition
simple
photoprocessing
steps
standeard
tfn
manufacturing
enables
formation
10
ohm
otherwise
structure
manufacturing process
processing steps
successive layers
process enables
successive layer
processing step
hybrid microcircuit
circuit structure
multiple sheet
film circuit
film hybrid
dielectric substrate
/427/29/338/