Piezoelectric shear wave resonator and method of making same

Patent · Fri Jan 01 04:00:00 EST 1988

OSTI ID:866474

Wang, Jin S ^[1]; Lakin, Kenneth M ^[2]; Landin, Allen R ^[2]

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1. Harbor City, CA
2. Ames, IA

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.

• Research Organization: Ames Laboratory (AMES), Ames, IA; Iowa State University, Ames, IA (US)
• DOE Contract Number: W-7405-ENG-82
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4719383
• OSTI ID: 866474
• Country of Publication: United States
• Language: English

Related Subjects

/310/
acoustic
acoustic shear
applied
approaching
axis substantially
c-axis
c-axis substantially
capable
coefficient
coefficient significantly
comprising
coupling
coupling coefficient
dc
degree
deposition
electric
electric field
exceeds
exciting
field
film
film normal
inclined
longitudinal
longitudinal wave
magnetron
magnetron sputter
magnetron sputtering
material
means
method
normal
piezoelectric
piezoelectric film
piezoelectric shear
planar
planar magnetron
positive
ppm
prepared
resonance
resonate
resonator
resonator comprising
resonator structure
semiconductor
semiconductor material
shear
shear wave
significantly
significantly exceeds
sputtering
structure
substantially
substantially inclined
supplemental
temperature
temperature coefficient
wave
wave coupling
wave resonator
whereby