Piezoelectric shear wave resonator and method of making same

Patent · Tue Sep 30 04:00:00 EDT 1986

OSTI ID:5912167

Wang, Jin S; Lakin, K M; Landin, A R

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C. 16 figs.

• Research Organization: Ames Lab., IA (USA)
• DOE Contract Number: W-7405-ENG-82
• Assignee: Dept. of Energy
• Patent Number(s): 4,719,383
• Application Number: 06/913,192, ON: DE88000872
• OSTI ID: 5912167
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
CHALCOGENIDES
ELECTRIC IMPEDANCE
ELECTRICITY
ELECTRONIC EQUIPMENT
EQUIPMENT
FABRICATION
FILMS
IMPEDANCE
NITRIDES
NITROGEN COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
PIEZOELECTRICITY
PNICTIDES
RESONATORS
SPUTTERING
TEMPERATURE DEPENDENCE
THIN FILMS
ZINC COMPOUNDS
ZINC OXIDES