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Title: Method of making a piezoelectric shear wave resonator

Patent ·
OSTI ID:866124

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.

Research Organization:
Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
DOE Contract Number:
W-7405-ENG-82
Assignee:
United States of America as represented by United States (Washington, DC)
Patent Number(s):
US 4640756
Application Number:
06/736,164
OSTI ID:
866124
Country of Publication:
United States
Language:
English