Method of making a piezoelectric shear wave resonator
Patent
·
OSTI ID:866124
- Harbor City, CA
- Ames, IA
An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.
- Research Organization:
- Ames Laboratory (AMES), Ames, IA; Iowa State Univ., Ames, IA (United States)
- DOE Contract Number:
- W-7405-ENG-82
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4640756
- Application Number:
- 06/736,164
- OSTI ID:
- 866124
- Country of Publication:
- United States
- Language:
- English
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method
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shear
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comprising
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c-axis
substantially
inclined
normal
coupling
coefficient
significantly
exceeds
longitudinal
whereby
capable
resonance
means
exciting
resonate
prepared
deposition
dc
planar
magnetron
sputtering
supplemental
electric
field
applied
structure
semiconductor
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positive
temperature
approaching
ppm
degree
piezoelectric film
wave resonator
magnetron sputter
magnetron sputtering
temperature coefficient
shear wave
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semiconductor material
significantly exceeds
c-axis substantially
resonator structure
coupling coefficient
wave coupling
planar magnetron
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substantially inclined
coefficient significantly
longitudinal wave
film normal
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/204/
piezoelectric
shear
wave
resonator
acoustic
comprising
film
c-axis
substantially
inclined
normal
coupling
coefficient
significantly
exceeds
longitudinal
whereby
capable
resonance
means
exciting
resonate
prepared
deposition
dc
planar
magnetron
sputtering
supplemental
electric
field
applied
structure
semiconductor
material
positive
temperature
approaching
ppm
degree
piezoelectric film
wave resonator
magnetron sputter
magnetron sputtering
temperature coefficient
shear wave
electric field
semiconductor material
significantly exceeds
c-axis substantially
resonator structure
coupling coefficient
wave coupling
planar magnetron
resonator comprising
substantially inclined
coefficient significantly
longitudinal wave
film normal
piezoelectric shear
acoustic shear
axis substantially
/204/