Method of depositing wide bandgap amorphous semiconductor materials
Patent
·
OSTI ID:866377
- Rocky Hill, NJ
A method of depositing wide bandgap p type amorphous semiconductor materials on a substrate without photosensitization by the decomposition of one or more higher order gaseous silanes in the presence of a p-type catalytic dopant at a temperature of about 200.degree. C. and a pressure in the range from about 1-50 Torr.
- Assignee:
- Chronar Corp. (Princeton, NJ)
- Patent Number(s):
- US 4696702
- Application Number:
- 06/933,972
- OSTI ID:
- 866377
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/438/136/427/
1-50
200
amorphous
amorphous semiconductor
bandgap
catalytic
decomposition
degree
depositing
depositing wide
dopant
gaseous
materials
method
p-type
photosensitization
presence
pressure
range
semiconductor
semiconductor material
semiconductor materials
silanes
substrate
temperature
torr
type
wide
wide band
wide bandgap
1-50
200
amorphous
amorphous semiconductor
bandgap
catalytic
decomposition
degree
depositing
depositing wide
dopant
gaseous
materials
method
p-type
photosensitization
presence
pressure
range
semiconductor
semiconductor material
semiconductor materials
silanes
substrate
temperature
torr
type
wide
wide band
wide bandgap