Process for selectively patterning epitaxial film growth on a semiconductor substrate

Patent · Wed Jan 01 04:00:00 EST 1986

OSTI ID:865997

Sheldon, Peter ^[1]; Hayes, Russell E ^[2]

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1. Golden, CO
2. Boulder, CO

A process is disclosed for selectively patterning epitaxial film growth on a semiconductor substrate. The process includes forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and the second layer covering the first layer. A window is then opened in a selected portion of the second layer by removing that portion to expose the first layer thereunder. The first layer is then subjected to an etchant introduced through the window to dissolve a sufficient amount of the first layer to expose the substrate surface directly beneath the window, the first layer being adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion with the second layer by undercutting the edges thereof adjacent to the window. The epitaxial film is then deposited on the exposed substrate surface directly beneath the window. Finally, an etchant is introduced through the window to dissolve the remainder of the first layer so as to lift-off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.

• Research Organization: MIDWEST RESEARCH INSTITUTE
• DOE Contract Number: AC02-83CH10093
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4614564
• OSTI ID: 865997
• Country of Publication: United States
• Language: English

Related Subjects

/438/117/257/
adapted
adjacent
amount
balance
beneath
covering
create
deposited
deposited thereon
directly
disclosed
disposed
dissolve
edge portion
edges
epitaxial
epitaxial film
etchant
expose
exposed
exposed substrate
film
film growth
finally
forming
growth
including
introduced
layer
layer disposed
layers
layers including
ledge
lift-off
masking
materials
overhanging
patterning
patterning epitaxial
portion
preferentially
process
rate
remainder
removing
selected
selected portion
selectively
selectively patterning
semiconductor
semiconductor substrate
subjected
substantially
substrate
substrate surface
sufficient
sufficient amount
surface
thereon
thereunder
undercutting
window