Process for selectively patterning epitaxial film growth on a semiconductor substrate
Patent
·
OSTI ID:5062260
A process is described for selectively patterning epitaxial film growth on a semiconductor substrate which comprises of: forming a masking member on the surface of the substrate, the masking member having at least two layers including a first layer disposed on the substrate and a second layer covering the first layer; opening a window in a selected portion of the second layer by removing the portion to expose the first layer thereunder; subjecting the first layer to an etchant introduced through the window to dissolve the first layer a sufficient amount to expose the substrate surface directly beneath the window, the first layer adapted to preferentially dissolve at a substantially greater rate than the second layer so as to create an overhanging ledge portion in the second layer by undercutting the edges thereof adjacent to the window; depositing the epitaxial film on the exposed substrate surface directly beneath the window; and introducing an etchant through the window to dissolve the remainder of the first layer so as to lift off the second layer and materials deposited thereon to fully expose the balance of the substrate surface.
- Assignee:
- Dept. of Energy, Washington, DC
- Patent Number(s):
- US 4614564
- OSTI ID:
- 5062260
- Country of Publication:
- United States
- Language:
- English
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