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Method for preparing high purity vanadium

Patent ·
OSTI ID:865976
 [1];  [1]
  1. Ames, IA
+ Show Author Affiliations
A method for preparing high purity vanadium having a low silicon content has been developed. Vanadium pentoxide is reduced with a stoichiometric, or slightly deficient amount of aluminum to produce a vanadium-aluminum alloy containing an excess of oxygen. Silicon is removed by electron-beam melting the alloy under oxidizing conditions to promote the formation of SiO which is volatile at elevated temperatures. Excess oxygen is removed by heating the alloy in the presence of calcium metal to form calcium oxide.
Research Organization:
Ames Laboratory (AMES), Ames, IA; Iowa State University, Ames, IA (US)
DOE Contract Number:
W-7405-ENG-82
Assignee:
United States of America as represented by Department of Energy (Washington, DC)
Patent Number(s):
US 4610720
Application Number:
06/610,905
OSTI ID:
865976
Country of Publication:
United States
Language:
English

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conditions
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electron-beam
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