Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Method for preparing high purity vanadium

Patent ·
OSTI ID:5165093
A method is described of preparing high-purity, low-silicon vanadium metal from vanadium pentoxide containing silicon, iron and other impurities comprising: mixing the vanadium pentoxide with aluminum to form a reaction mixture, the quantity of aluminum in the mixture being from about stoichiometric to about 10% deficient in the amount necessary to completely reduce the vanadium pentoxide to vanadium metal: heating the mixture under reducing conditions to a temperature sufficient to react the mixture to reduce the vanadium pentoxide and form a vanadium-aluminum alloy containing silicon, iron and from about 0.6 to about 3 weight percent oxygen; heating the alloy under reduced pressure to a temperature sufficient to vaporize the aluminum and iron in the alloy and to react the silicon with some of the oxygen to form volatile silicon monoxide which vaporizes away from the alloy thereby removing aluminum, iron, silicon and some of the oxygen from the vanadium metal, and heating the vanadium metal in the presence of calcium metal to a temperature and for a period of time sufficient for the oxygen to diffuse from the vanadium and react with the calcium to form calcium oxide, thereby removing oxygen from the vanadium metal, forming a high-purity, low-silicon vanadium metal.
Assignee:
Dept. of Energy, Washington, DC
Patent Number(s):
US 4610720
OSTI ID:
5165093
Country of Publication:
United States
Language:
English