Method of using polysilane positive photoresist materials
Patent
·
OSTI ID:865842
- Albuquerque, NM
New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A ad B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.
- Research Organization:
- AT & T CORP
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4587205
- OSTI ID:
- 865842
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
--si
/430/528/999/
1-13
3-13
adjoining
alkyl
alkylene
alkylphenyl
atom
atoms
carbon
carbon atom
carbon atoms
comprise
comprise recurring
contains
copolymers
copolymers comprise
corresponding
cycloalkyl
direct
direct formation
eliminating
enable
ethyl
form
form volatile
formation
forming
heretofore
heretofore required
homopolysilanes
hydrogen
image
independently
irradiation
materials
method
methyl
moiety
n-propyl
phenyl
phenylalkyl
photodepolymerize
photoresist
photoresist material
photoresist materials
photoresists
polysilane
polysilane copolymers
polysilane positive
positive
positive photoresist
products
provided
proviso
recurring
recurring units
represent
required
resist material
result
step
ultraviolet
ultraviolet irradiation
units
volatile
/430/528/999/
1-13
3-13
adjoining
alkyl
alkylene
alkylphenyl
atom
atoms
carbon
carbon atom
carbon atoms
comprise
comprise recurring
contains
copolymers
copolymers comprise
corresponding
cycloalkyl
direct
direct formation
eliminating
enable
ethyl
form
form volatile
formation
forming
heretofore
heretofore required
homopolysilanes
hydrogen
image
independently
irradiation
materials
method
methyl
moiety
n-propyl
phenyl
phenylalkyl
photodepolymerize
photoresist
photoresist material
photoresist materials
photoresists
polysilane
polysilane copolymers
polysilane positive
positive
positive photoresist
products
provided
proviso
recurring
recurring units
represent
required
resist material
result
step
ultraviolet
ultraviolet irradiation
units
volatile