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U.S. Department of Energy
Office of Scientific and Technical Information

Method of using polysilane positive photoresist materials

Patent ·
OSTI ID:7245320

New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A ad B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.

DOE Contract Number:
AC04-76DP00789
Assignee:
Dept. of Energy, Washington, DC (United States)
Patent Number(s):
US 4587205; A
Application Number:
PPN: US 6-676148
OSTI ID:
7245320
Country of Publication:
United States
Language:
English