Method of using polysilane positive photoresist materials

Patent · Wed Jan 01 00:00:00 EST 1986

OSTI ID:865842

Harrah, Larry A ^[1]; Zeigler, John M ^[1]

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1. Albuquerque, NM

New polysilane copolymers comprise recurring units of --Si(X)(Y)-- and Si(A)(B)--, Si(X)(Y) being different from Si(A)(B), wherein X and Y together have 1-13 carbon atoms, and X and Y each independently is hydrogen, alkyl, cycloalkyl, phenyl, alkylphenyl, or phenylalkyl, with the proviso that only one of X and Y contains a phenyl moiety, or together X and Y are an alkylene group forming a ring with the adjoining Si atom, and wherein A and B together have 3-13 carbon atoms, and A and B each independently is alkyl or cycloalkyl, with the proviso (a) that when one of A and B is ethyl, the other is not methyl or ethyl, and (b) that when one of A ad B is n-propyl and the other is methyl, X and Y are not both methyl. Corresponding homopolysilanes are also provided. Upon ultraviolet irradiation, they photodepolymerize to form volatile products. As a result, they represent a new class of photoresists which enable direct formation of a positive image eliminating the heretofore required development step.

• Research Organization: AT&T
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4587205
• OSTI ID: 865842
• Country of Publication: United States
• Language: English

Related Subjects

method
polysilane
positive
photoresist
materials
copolymers
comprise
recurring
units
-si
1-13
carbon
atoms
independently
hydrogen
alkyl
cycloalkyl
phenyl
alkylphenyl
phenylalkyl
proviso
contains
moiety
alkylene
forming
adjoining
atom
3-13
ethyl
methyl
n-propyl
corresponding
homopolysilanes
provided
ultraviolet
irradiation
photodepolymerize
form
volatile
products
result
represent
photoresists
enable
direct
formation
image
eliminating
heretofore
required
step
resist material
form volatile
carbon atoms
carbon atom
photoresist material
recurring units
ultraviolet irradiation
photoresist materials
comprise recurring
direct formation
heretofore required
positive photoresist
polysilane copolymers
polysilane positive
copolymers comprise
/430/528/999/