Direct determination of quantum efficiency of semiconducting films

Patent · Tue Dec 31 23:00:00 EST 1985

OSTI ID:865742

Faughnan, Brian W ^[1]; Hanak, Joseph J ^[2]

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1. Princeton, NJ
2. Lawrenceville, NJ

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

• Research Organization: National Renewable Energy Laboratory (NREL), Golden, CO
• DOE Contract Number: EG-77-C-01-4042
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4564808
• OSTI ID: 865742
• Country of Publication: United States
• Language: English

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conducting film
conducting films
determination
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direct
directly
efficiency
electrodes
external
films
form
generated
illuminated
impressed
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photocurrent
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quantum
quantum efficiency
requiring
sample
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schottky
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semiconducting
semiconducting films
semiconductor
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