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Title: Direct determination of quantum efficiency of semiconducting films

Abstract

Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.

Inventors:
 [1];  [2]
  1. Princeton, NJ
  2. Lawrenceville, NJ
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
865742
Patent Number(s):
US 4564808
Assignee:
United States of America as represented by United States (Washington, DC)
DOE Contract Number:  
EG-77-C-01-4042
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
direct; determination; quantum; efficiency; semiconducting; films; photovoltaic; semiconductor; samples; determined; directly; requiring; built-in; photovoltage; generated; sample; electrodes; attached; form; schottky; barrier; therewith; illuminated; photocurrent; carriers; collected; external; bias; voltage; impressed; measured; calculated; therefrom; schottky barrier; bias voltage; quantum efficiency; semiconductor sample; conducting films; semiconductor samples; semiconducting films; conducting film; /324/

Citation Formats

Faughnan, Brian W, and Hanak, Joseph J. Direct determination of quantum efficiency of semiconducting films. United States: N. p., 1986. Web.
Faughnan, Brian W, & Hanak, Joseph J. Direct determination of quantum efficiency of semiconducting films. United States.
Faughnan, Brian W, and Hanak, Joseph J. Wed . "Direct determination of quantum efficiency of semiconducting films". United States. https://www.osti.gov/servlets/purl/865742.
@article{osti_865742,
title = {Direct determination of quantum efficiency of semiconducting films},
author = {Faughnan, Brian W and Hanak, Joseph J},
abstractNote = {Photovoltaic quantum efficiency of semiconductor samples is determined directly, without requiring that a built-in photovoltage be generated by the sample. Electrodes are attached to the sample so as to form at least one Schottky barrier therewith. When illuminated, the generated photocurrent carriers are collected by an external bias voltage impressed across the electrodes. The generated photocurrent is measured, and photovoltaic quantum efficiency is calculated therefrom.},
doi = {},
url = {https://www.osti.gov/biblio/865742}, journal = {},
number = ,
volume = ,
place = {United States},
year = {1986},
month = {1}
}

Patent:

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