Direct determination of quantum efficiency of semiconducting films

Patent · Tue Jan 14 04:00:00 EST 1986

OSTI ID:6145426

Faughnan, B W; Hanak, J J

This patent describes a method which is independent of built-in photovoltage for determining the quantum efficiency of a single layer semiconductor sample of essentially a single conductive type. The first step in the determination consists of forming electrical connections (Schottky barrier formed in one case) by means of two electrodes with the opposing surfaces of the semiconductor sample. An external source of bias voltage and a means for measuring sample photocurrents are located between the first and second electrodes. A calibrated photocurrent generator having known values of quantum efficiency for each corresponding photocurrent generated in response to illumination by radiant energy of a known wavelength is utilized for comparative purposes. Upon illumination of the sample and the generator under identical conditions and the measurement of respective photocurrents, the quantum efficiency of the sample can be calculated by formula.

• Assignee: Dept. of Energy, Washington, DC
• Patent Number(s): US 4564808
• OSTI ID: 6145426
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CALCULATION METHODS
CHARGE CARRIERS
CURRENTS
EFFICIENCY
ELECTRIC CURRENTS
ELECTRIC POTENTIAL
ELECTRODES
EQUATIONS
FILMS
ILLUMINANCE
MATERIALS
MEASURING INSTRUMENTS
PHOTOCURRENTS
PRODUCTION
QUANTUM EFFICIENCY
SCHOTTKY BARRIER DIODES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR MATERIALS
SURFACES
WAVELENGTHS