Method for production of free-standing polycrystalline boron phosphide film

Patent · Mon Dec 31 23:00:00 EST 1984

OSTI ID:865656

Baughman, Richard J ^[1]; Ginley, David S ^[1]

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1. Albuquerque, NM

A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

• Research Organization: AT & T CORP
• DOE Contract Number: AC04-76DP00789
• Assignee: United States of America as represented by United States (Washington, DC)
• Patent Number(s): US 4550014
• OSTI ID: 865656
• Country of Publication: United States
• Language: English

Related Subjects

/423/117/252/427/438/
apparatus
boron
boron phosphide
cleanly
coefficient
comprises
comprises growing
cooling
crystalline boron
device
device fabrication
electronic
electronic device
expansion
fabrication
film
film comprises
free-standing
free-standing polycrystalline
growing
growth
growth apparatus
metal
metal substrate
method
phosphide
phosphide film
polycrystalline
polycrystalline boron
preferably
preferably titanium
process
producing
production
separates
substrate
sufficiently
thermal
thermal expansion
titanium
vertical