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Method for production of free standing polycrystalline boron phosphide film

Patent ·
OSTI ID:5830300
;
A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.
Assignee:
The United States of America as represented by the United States Department of Energy
Patent Number(s):
US 4550014
OSTI ID:
5830300
Country of Publication:
United States
Language:
English

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Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
BORON COMPOUNDS
BORON PHOSPHIDES
COOLING
CRYSTAL GROWTH METHODS
CRYSTALS
ELEMENTS
EXPANSION
FABRICATION
FILMS
METALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PNICTIDES
POLYCRYSTALS
PRODUCTION
SEMICONDUCTOR DEVICES
SUBSTRATES
THERMAL EXPANSION
THIN FILMS
TITANIUM
TRANSITION ELEMENTS