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U.S. Department of Energy
Office of Scientific and Technical Information

Free-standing polycrystalline boron phosphide film and method for production thereof

Patent ·
OSTI ID:5827636

A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.

DOE Contract Number:
AC04-76DP00789
Assignee:
SNL; ERA-08-054285; EDB-83-177672
Patent Number(s):
None
Application Number:
ON: DE83018104
OSTI ID:
5827636
Country of Publication:
United States
Language:
English