Free-standing polycrystalline boron phosphide film and method for production thereof
Patent
·
OSTI ID:5827636
A process for producing a free-standing polycrystalline boron phosphide film comprises growing a film of boron phosphide in a vertical growth apparatus on a metal substrate. The metal substrate has a coefficient of thermal expansion sufficiently different from that of boron phosphide that the film separates cleanly from the substrate upon cooling thereof, and the substrate is preferably titanium. The invention also comprises a free-standing polycrystalline boron phosphide film for use in electronic device fabrication.
- DOE Contract Number:
- AC04-76DP00789
- Assignee:
- SNL; ERA-08-054285; EDB-83-177672
- Patent Number(s):
- None
- Application Number:
- ON: DE83018104
- OSTI ID:
- 5827636
- Country of Publication:
- United States
- Language:
- English
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