Thin films of mixed metal compounds
Patent
·
OSTI ID:865480
- Bellevue, WA
- Seattle, WA
A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- Boeing Company (Seattle, WA)
- Patent Number(s):
- US 4523051
- OSTI ID:
- 865480
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/136/427/438/
cells
compositionally
compound
compounds
deposited
evaporating
film
film heterojunction
films
formed
forming
free
free path
gas
heterojunction
heterojunction solar
independent
junction solar
mean
mean free
metal
metal compound
metal compounds
mixed
mixed metal
mixed vapor
particles
particular
particular utility
path
reduced
simultaneously
solar
solar cell
solar cells
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uniform
uniformly
utility
vapor
vapors
cells
compositionally
compound
compounds
deposited
evaporating
film
film heterojunction
films
formed
forming
free
free path
gas
heterojunction
heterojunction solar
independent
junction solar
mean
mean free
metal
metal compound
metal compounds
mixed
mixed metal
mixed vapor
particles
particular
particular utility
path
reduced
simultaneously
solar
solar cell
solar cells
sources
uniform
uniformly
utility
vapor
vapors