Thin films of mixed metal compounds

Patent · Tue Jun 11 04:00:00 EDT 1985

OSTI ID:7261689

Mickelsen, R A; Chen, W S

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

• DOE Contract Number: EG-77-C-01-4042
• Assignee: Boeing Co., Seattle, WA (United States)
• Patent Number(s): US 4523051; A
• Application Number: PPN: US 6-536395
• OSTI ID: 7261689
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
HETEROJUNCTIONS
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING