Thin films of mixed metal compounds
Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- Boeing Co., Seattle, WA (United States)
- Patent Number(s):
- US 4523051; A
- Application Number:
- PPN: US 6-536395
- OSTI ID:
- 7261689
- Country of Publication:
- United States
- Language:
- English
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Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
DEPOSITION
DESIGN
DIRECT ENERGY CONVERTERS
EQUIPMENT
FABRICATION
HETEROJUNCTIONS
JUNCTIONS
MATERIALS
N-TYPE CONDUCTORS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR JUNCTIONS
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING