Methods for forming thin-film heterojunction solar cells from I-III-VI{sub 2}
An improved thin-film, large area solar cell, and methods for forming the same are disclosed, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI{sub 2} chalcopyrite ternary materials which is vacuum deposited in a thin ``composition-graded`` layer ranging from on the order of about 2.5 microns to about 5.0 microns ({approx_equal}2.5 {mu}m to {approx_equal}5.0 {mu}m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii) a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion occurs (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer. 16 figs.
- Research Organization:
- Midwest Research Institute
- Sponsoring Organization:
- USDOE
- DOE Contract Number:
- EG-77-C-01-4042
- Assignee:
- Boeing Co., Seattle, WA (United States)
- Patent Number(s):
- US RE 31,968/E/
- Application Number:
- PAN: 6-620,637
- OSTI ID:
- 27736
- Country of Publication:
- United States
- Language:
- English
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