Methods for forming thin-film heterojunction solar cells from I-III-VI2

Mickelsen, Reid A.; Chen, Wen S.

Methods for forming thin-film heterojunction solar cells from I-III-VI₂

Patent · Tue Aug 13 04:00:00 EDT 1985

OSTI ID:1176687

Mickelsen, Reid A.; Chen, Wen S.

An improved thin-film, large area solar cell, and methods for forming the same, having a relatively high light-to-electrical energy conversion efficiency and characterized in that the cell comprises a p-n type heterojunction formed of: (i) a first semiconductor layer comprising a photovoltaic active material selected from the class of I-III-VI₂ chalcopyrite ternary materials which is vacuum deposited in a thin "composition-graded" layer ranging from on the order of about 2.5 microns to about 5.0 microns (≅2.5 $$\mu$$m to .congruent.5.0 .mu.m) and wherein the lower region of the photovoltaic active material preferably comprises a low resistivity region of p-type semiconductor material having a superimposed region of relatively high resistivity, transient n-type semiconductor material defining a transient p-n homojunction; and (ii), a second semiconductor layer comprising a low resistivity n-type semiconductor material; wherein interdiffusion (a) between the elemental constituents of the two discrete juxtaposed regions of the first semiconductor layer defining a transient p-n homojunction layer, and (b) between the transient n-type material in the first semiconductor layer and the second n-type semiconductor layer, causes the

View Patent

Research Organization:: The Boeing Company, Seattle, WA (United States)

Sponsoring Organization:: USDOE

DOE Contract Number:: EG-77-C-01-4042

Assignee:: The Boeing Company (Seattle, WA)

Patent Number(s):: RE31968

Application Number:: 06/620,637

OSTI ID:: 1176687

Country of Publication:: United States

Language:: English

References (20)

Photovoltaic Effect in CuInSe₂/CdS Heterojunctions Kokubun, Yoshihiro; Wada, Masanobu Japanese Journal of Applied Physics, Vol. 16, Issue 5 https://doi.org/10.1143/JJAP.16.879	journal	May 1977
High photocurrent polycrystalline thin‐film CdS/CuInSe₂solar cell^a Mickelsen, R. A.; Chen, Wen S. Applied Physics Letters, Vol. 36, Issue 5 https://doi.org/10.1063/1.91491	journal	March 1980
Structural and electrical properties of CuInSe2 epitaxial layers prepared by single-source evaporation Neumann, H.; Nowak, E.; Schumann, B. Thin Solid Films, Vol. 74, Issue 2 https://doi.org/10.1016/0040-6090(80)90081-4	journal	December 1980
Multicomponent tetrahedral compounds for solar cells Wagner, Sigurd; Bridenbaugh, P. M. Journal of Crystal Growth, Vol. 39, Issue 1 https://doi.org/10.1016/0022-0248(77)90162-2	journal	July 1977
Photovoltaic properties and junction formation in CuInSe ₂ Tell, B.; Bridenbaugh, P. M. Journal of Applied Physics, Vol. 48, Issue 6 https://doi.org/10.1063/1.324012	journal	June 1977
Growth of CuInSe₂ films using molecular beam epitaxy White, F. R.; Clark, A. H.; Graf, M. C. Journal of Vacuum Science and Technology, Vol. 16, Issue 2 https://doi.org/10.1116/1.569928	journal	March 1979
Efficient CuInSe ₂ /CdS solar cells Shay, J. L.; Wagner, Sigurd; Kasper, H. M. Applied Physics Letters, Vol. 27, Issue 2 https://doi.org/10.1063/1.88372	journal	July 1975
CuInSe ₂ /CdS heterojunction photovoltaic detectors Wagner, Sigurd; Shay, J. L.; Migliorato, P. Applied Physics Letters, Vol. 25, Issue 8 https://doi.org/10.1063/1.1655537	journal	October 1974
Copper Indium Diselenide for CdS: CuInSe2 Solar Cells Don, E. R.; Baber, S. R.; Hill, R. Photovoltaic Solar Energy Conference https://doi.org/10.1007/978-94-009-8423-3_147	book	January 1981
Growth of CuInSe₂on CdS using molecular beam epitaxy White, F. R.; Clark, A. H.; Graf, M. C. Journal of Applied Physics, Vol. 50, Issue 1 https://doi.org/10.1063/1.325624	journal	January 1979
Auger electron spectroscopy studies of I–III–VI₂ chalcopyrite compounds Kazmerski, L. L.; Sprague, D. L.; Cooper, R. B. Journal of Vacuum Science and Technology, Vol. 15, Issue 2 https://doi.org/10.1116/1.569561	journal	March 1978
Preparation of amorphous CuInSe2 thin films Durný, R.; Hill, A. E.; Tomlinson, R. D. Thin Solid Films, Vol. 69, Issue 2 https://doi.org/10.1016/0040-6090(80)90044-9	journal	June 1980
Auger analysis of CdS—CuInSe₂thin-film solar cells Kazmerski, L. L.; Cooper, R. B.; White, F. R. IEEE Transactions on Electron Devices, Vol. 24, Issue 4 https://doi.org/10.1109/T-ED.1977.18766	journal	April 1977
Some observations on the effect of evaporation source temperature on the composition of CuInSe2 thin films Tomlinson, R. D.; Omezi, D.; Parkes, J. Thin Solid Films, Vol. 65, Issue 2 https://doi.org/10.1016/0040-6090(80)90261-8	journal	January 1980
CuInS ₂ thin‐film homojunction solar cells Kazmerski, L. L.; Sanborn, G. A. Journal of Applied Physics, Vol. 48, Issue 7 https://doi.org/10.1063/1.324058	journal	July 1977
Growth and characterization of thin‐film compound semiconductor photovoltaic heterojunctions Kazmerski, L. L.; White, F. R.; Ayyagari, M. S. Journal of Vacuum Science and Technology, Vol. 14, Issue 1 https://doi.org/10.1116/1.569173	journal	January 1977
Thin‐film CuInSe ₂ /CdS heterojunction solar cells Kazmerski, L. L.; White, F. R.; Morgan, G. K. Applied Physics Letters, Vol. 29, Issue 4 https://doi.org/10.1063/1.89041	journal	August 1976
Motion of p ‐ n junctions in CuInSe ₂ Tell, B.; Wagner, Sigurd; Bridenbaugh, P. M. Applied Physics Letters, Vol. 28, Issue 8 https://doi.org/10.1063/1.88796	journal	April 1976
Photovoltaic properties ofp‐njunctions in CuInS₂ Tell, B.; Thiel, F. A. Journal of Applied Physics, Vol. 50, Issue 7 https://doi.org/10.1063/1.325604	journal	July 1979
p −InP/ n −CdS solar cells and photovoltaic detectors Wagner, Sigurd; Shay, J. L.; Bachmann, K. J. Applied Physics Letters, Vol. 26, Issue 5 https://doi.org/10.1063/1.88131	journal	March 1975

Similar Records

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

Patent · Thu Dec 31 23:00:00 EST 1981 · OSTI ID:864241

Methods for forming thin-film heterojunction solar cells from I-III-VI.sub. 2

Patent · Tue Aug 13 00:00:00 EDT 1985 · OSTI ID:875289

Apparatus for forming thin-film heterojunction solar cells employing materials selected from the class of I-III-VI.sub.2 chalcopyrite compounds

Patent · Fri Dec 31 23:00:00 EST 1982 · OSTI ID:864614

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE

Methods for forming thin-film heterojunction solar cells from I-III-VI2

Citation Formats

References (20)

Similar Records

Related Subjects

Methods for forming thin-film heterojunction solar cells from I-III-VI₂