Photon detector system
- Lexington, KY
A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.
- Research Organization:
- BATTELLE MEMORIAL INSTITUTE
- DOE Contract Number:
- AC06-76RL01830
- Assignee:
- Battelle Development Corporation (Columbus, OH)
- Patent Number(s):
- US 4303861
- OSTI ID:
- 864062
- Country of Publication:
- United States
- Language:
- English
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avalanche
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breakdown
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characteristic
charge
charge carrier
charge carriers
circuitry
condition
cooled
cryogenic
cryogenic temperature
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eliminate
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photon
photon detector
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receipt
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reduces
schottky
schottky barrier
semiconductor
semiconductor device
subsequently
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