Photon detector system

Patent · Thu Jan 01 00:00:00 EST 1981

OSTI ID:864062

Ekstrom, Philip A ^[1]

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1. Lexington, KY

A photon detector includes a semiconductor device, such as a Schottky barrier diode, which has an avalanche breakdown characteristic. The diode is cooled to cryogenic temperatures to eliminate thermally generated charge carriers from the device. The diode is then biased to a voltage level exceeding the avalanche breakdown threshold level such that, upon receipt of a photon, avalanche breakdown occurs. This breakdown is detected by appropriate circuitry which thereafter reduces the diode bias potential to a level below the avalanche breakdown threshold level to terminate the avalanche condition. Subsequently, the bias potential is reapplied to the diode in preparation for detection of a subsequently received photon.

• Research Organization: Battelle Memorial Institute, Columbus, OH (United States)
• DOE Contract Number: AC06-76RL01830
• Assignee: Battelle Development Corporation (Columbus, OH)
• Patent Number(s): US 4303861
• OSTI ID: 864062
• Country of Publication: United States
• Language: English

Related Subjects

photon
detector
semiconductor
device
schottky
barrier
diode
avalanche
breakdown
characteristic
cooled
cryogenic
temperatures
eliminate
thermally
generated
charge
carriers
biased
voltage
level
exceeding
threshold
receipt
occurs
detected
appropriate
circuitry
thereafter
reduces
bias
potential
below
terminate
condition
subsequently
reapplied
preparation
detection
received
bias potential
charge carrier
cryogenic temperature
cryogenic temperatures
charge carriers
threshold level
schottky barrier
semiconductor device
voltage level
photon detector
generated charge
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