Pulsed breakdown of 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction

Journal Article · Tue Jul 15 04:00:00 EDT 2008 · Semiconductors

DOI:https://doi.org/10.1134/S1063782608070178· OSTI ID:21255642

Grekhov, I V; Potapov, A S; Samsonova, T P ^[1]

---

1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

Pulsed reverse current-voltage characteristics have been measured in the breakdown region for 1-kV 4H-SiC Schottky diodes terminated with a boron-implanted p-n junction. It was shown that the dynamic breakdown voltage of the diodes increases as the pulses become shorter. Owing to the homogeneous avalanche formation at the edge of the guard p-n junction and to the high differential resistance in the breakdown region, the diodes sustain without degradation a pulsed reverse voltage substantially exceeding the static breakdown threshold. Characteristic features of the pulsed breakdown are considered in relation to the specific properties of the boron-implanted guard p-n junction.

• OSTI ID: 21255642
• Journal Information: Semiconductors, Journal Name: Semiconductors Journal Issue: 7 Vol. 42; ISSN SMICES; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
ION IMPLANTATION
P-N JUNCTIONS
SCHOTTKY BARRIER DIODES
SILICON CARBIDES