High-voltage (900 V) 4 H-SiC Schottky diodes with a boron-implanted guard p-n junction
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
High-voltage (900 V) 4H-SiC Schottky diodes terminated with a guard p-n junction were fabricated and studied. The guard p-n junction was formed by room-temperature boron implantation with subsequent high-temperature annealing. Due to transient enhanced boron diffusion during annealing, the depth of the guard p-n junction was equal to about 1.7 {mu}m, which is larger by approximately 1 {mu}m than the projected range of 11 B ions in 4H-SiC. The maximum reverse voltage of fabricated 4H-SiC Schottky diodes is found to be limited by avalanche breakdown of the planar p-n junction; the value of the breakdown voltage (910 V) is close to theoretical estimate in the case of the impurity concentration N = 2.5 x 10{sup 15} cm{sup -3} in the n-type layer, thickness of the n-type layer d = 12.5 {mu}m, and depth of the p-n junction r{sub j} = 1.7 {mu}m. The on-state diode resistance (3.7 m{omega} cm{sup 2}) is controlled by the resistance of the epitaxial n-type layer. The recovery charge of about 1.3 nC is equal to the charge of majority charge carriers that are swept out of an epitaxial n-type layer under the effect of a reverse voltage.
- OSTI ID:
- 21087923
- Journal Information:
- Semiconductors, Vol. 42, Issue 2; Other Information: DOI: 10.1007/s11453-008-2017-6; Copyright (c) 2008 Pleiades Publishing, Ltd; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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