Method for forming p-n junctions and solar-cells by laser-beam processing
Patent
·
OSTI ID:863317
- Knoxville, TN
This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4147563
- OSTI ID:
- 863317
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
/438/136/148/219/257/
10
100
1000
20
50
60
above-mentioned
antireflective
antireflective coating
application
back-surface
cells
cm
coating
conversion
conversion efficiency
density
depending
deposited
depths
devices
diodes
dopant
duration
effecting
efficiency
energy
fields
forming
high-quality
improved
improved method
initially
junction
junction device
junction devices
junctions
laser
laser pulse
laser pulses
laser-beam
laser-diffusion
layer
means
melting
method
nanoseconds
one-sun
p-n
p-n junction
p-n junctions
parameters
preferably
prepared
preparing
processing
produce
pulse
pulse parameters
pulses
range
reflective coating
selected
silicon
solar
solar cell
solar cells
solar-cells
superficial
superficial layer
surface field
thickness
values
wavelength
10
100
1000
20
50
60
above-mentioned
antireflective
antireflective coating
application
back-surface
cells
cm
coating
conversion
conversion efficiency
density
depending
deposited
depths
devices
diodes
dopant
duration
effecting
efficiency
energy
fields
forming
high-quality
improved
improved method
initially
junction
junction device
junction devices
junctions
laser
laser pulse
laser pulses
laser-beam
laser-diffusion
layer
means
melting
method
nanoseconds
one-sun
p-n
p-n junction
p-n junctions
parameters
preferably
prepared
preparing
processing
produce
pulse
pulse parameters
pulses
range
reflective coating
selected
silicon
solar
solar cell
solar cells
solar-cells
superficial
superficial layer
surface field
thickness
values
wavelength