Method for forming p-n junctions and solar-cells by laser-beam processing
- Knoxville, TN
This invention is an improved method for preparing p-n junction devices, such as diodes and solar cells. High-quality junctions are prepared by effecting laser-diffusion of a selected dopant into silicon by means of laser pulses having a wavelength of from about 0.3 to 1.1 .mu.m, an energy area density of from about 1.0 to 2.0 J/cm.sup.2, and a duration of from about 20 to 60 nanoseconds. Initially, the dopant is deposited on the silicon as a superficial layer, preferably one having a thickness in the range of from about 50 to 100 A. Depending on the application, the values for the above-mentioned pulse parameters are selected to produce melting of the silicon to depths in the range from about 1000 A to 1 .mu.m. The invention has been used to produce solar cells having a one-sun conversion efficiency of 10.6%, these cells having no antireflective coating or back-surface fields.
- Research Organization:
- Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
- Assignee:
- United States of America as represented by United States (Washington, DC)
- Patent Number(s):
- US 4147563
- OSTI ID:
- 863317
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
forming
p-n
junctions
solar-cells
laser-beam
processing
improved
preparing
junction
devices
diodes
solar
cells
high-quality
prepared
effecting
laser-diffusion
selected
dopant
silicon
means
laser
pulses
wavelength
energy
density
cm
duration
20
60
nanoseconds
initially
deposited
superficial
layer
preferably
thickness
range
50
100
depending
application
values
above-mentioned
pulse
parameters
produce
melting
depths
1000
one-sun
conversion
efficiency
10
antireflective
coating
back-surface
fields
antireflective coating
reflective coating
p-n junctions
p-n junction
laser pulses
conversion efficiency
improved method
laser pulse
solar cell
solar cells
superficial layer
pulse parameters
surface field
junction device
junction devices
/438/136/148/219/257/