Transfer of a metal from a transparent film to the surface of silicon to produce P-N junction solar cells

Journal Article · Thu May 01 04:00:00 EDT 1986 · J. Sol. Energy Eng.; (United States)

DOI:https://doi.org/10.1115/1.3268074· OSTI ID:5472771

Toulemonde, M; Muller, J C; Stuck, R

A new method is proposed for preparing silicon P-N junctions. The first consists in fixing a transparent plastic film coated with a thin layer of a conventional dopant on the surface of the wafer, then illuminating this sandwich with a higher power Q switched laser. Two successive pulses are used, the first being able to transfer the dopant from the film to the silicon surface, the second to induce a liquid phase diffusion incorporating the dopant into the silicon lattice. Solar cells have been prepared by using this process, implying several attractive features.

• Research Organization: Ciril-Ganil, 14040 Caen
• OSTI ID: 5472771
• Journal Information: J. Sol. Energy Eng.; (United States), Journal Name: J. Sol. Energy Eng.; (United States) Vol. 108:2; ISSN JSEED
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CRYSTAL DOPING
DIFFUSION
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
FABRICATION
FILMS
HEATING
ILLUMINANCE
JUNCTIONS
LASER-RADIATION HEATING
MATERIALS
METALS
OPACITY
OPTICAL PROPERTIES
P-N JUNCTIONS
PETROCHEMICALS
PETROLEUM PRODUCTS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PLASMA HEATING
PLASTICS
PULSES
Q-SWITCHING
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE TREATMENTS
SYNTHETIC MATERIALS
THIN FILMS