Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
- Mountain View, CA
- Albuquerque, NM
A process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction for use in advanced magnetic random access memory (MRAM) cells for high performance, non-volatile memory arrays. The process is based on pulsed laser processing for the fabrication of vertical polycrystalline silicon electronic device structures, in particular p-n junction diodes, on films of metals deposited onto low temperature-substrates such as ceramics, dielectrics, glass, or polymers. The process preserves underlayers and structures onto which the devices are typically deposited, such as silicon integrated circuits. The process involves the low temperature deposition of at least one layer of silicon, either in an amorphous or a polycrystalline phase on a metal layer. Dopants may be introduced in the silicon film during or after deposition. The film is then irradiated with short pulse laser energy that is efficiently absorbed in the silicon, which results in the crystallization of the film and simultaneously in the activation of the dopants via ultrafast melting and solidification. The silicon film can be patterned either before or after crystallization.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- DOE Contract Number:
- W-7405-ENG-48
- Assignee:
- The Regents of the University of California (Oakland, CA)
- Patent Number(s):
- US 6541316
- OSTI ID:
- 875136
- Country of Publication:
- United States
- Language:
- English
Similar Records
Process for direct integration of a thin-film silicon p-n junction diode with a magnetic tunnel junction
ZnO PN Junctions for Highly-Efficient, Low-Cost Light Emitting Diodes
Related Subjects
direct
integration
thin-film
silicon
p-n
junction
diode
magnetic
tunnel
advanced
random
access
memory
mram
cells
performance
non-volatile
arrays
based
pulsed
laser
processing
fabrication
vertical
polycrystalline
electronic
device
structures
diodes
films
metals
deposited
temperature-substrates
ceramics
dielectrics
glass
polymers
preserves
underlayers
devices
typically
integrated
circuits
involves
temperature
deposition
layer
amorphous
phase
metal
dopants
introduced
film
irradiated
pulse
energy
efficiently
absorbed
results
crystallization
simultaneously
activation
via
ultrafast
melting
solidification
patterned
metal layer
integrated circuit
pulsed laser
crystalline phase
random access
film silicon
/438/