Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

The red (1.8 eV) luminescence in epitaxially grown GaN

Journal Article · · Physica Status Solidi A
No abstract prepared.
Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
842084
Report Number(s):
LBNL--49621
Journal Information:
Physica Status Solidi A, Journal Name: Physica Status Solidi A Journal Issue: 1 Vol. 180
Country of Publication:
United States
Language:
English

Similar Records

Polarity of GaN Grown on Sapphire by Molecular Beam Epitaxy with Different Buffer Layers
Journal Article · Sun Jan 27 23:00:00 EST 2002 · Physica Status Solidi A · OSTI ID:792958

Microstructure of GaN layers grown on (001) GaAs by plasma-assisted molecular-beam-epitaxy
Journal Article · Mon Sep 01 00:00:00 EDT 1997 · Applied Physics Letters · OSTI ID:773665

Unusual luminescence lines in GaN
Journal Article · Thu Jul 08 00:00:00 EDT 2004 · Journal of Applied Physics · OSTI ID:842263