Skip to main content
U.S. Department of Energy
Office of Scientific and Technical Information

Structural-relaxation-induced bond length and bond angle changes in amorphized Ge

Journal Article · · Physical Review B
OSTI ID:842082

No abstract prepared.

Research Organization:
Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
842082
Report Number(s):
LBNL--49610
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 7 Vol. 63
Country of Publication:
United States
Language:
English

Similar Records

Composition-dependent bond lengths in crystalline and amorphous GexSi1-x alloys
Journal Article · Tue Mar 09 23:00:00 EST 1999 · Physical Review B · OSTI ID:771906

Direct observation of structural relaxation in amorphous compound semiconductors
Journal Article · Thu May 01 00:00:00 EDT 2003 · Nuclear Instruments and Methods in Physics Research, Section B · OSTI ID:821741

Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide
Journal Article · Mon Apr 14 00:00:00 EDT 2003 · Physical Review, B: Condensed Matter · OSTI ID:821742