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Direct observation of structural relaxation in amorphous compound semiconductors

Journal Article · Thu May 01 00:00:00 EDT 2003 · Nuclear Instruments and Methods in Physics Research, Section B

DOI:https://doi.org/10.1016/S0168-583X(03)00926-1· OSTI ID:821741

Azevedo, G de M. ^[1]; Glover, C J; Yu, K M; Foran, G J; Ridgway, M C

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 821741

Report Number(s):: LBNL--54649

Journal Information:: Nuclear Instruments and Methods in Physics Research, Section B, Journal Name: Nuclear Instruments and Methods in Physics Research, Section B Vol. 206; ISSN 0168-583X; ISSN NIMBEU

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
AMORPHOUS STATE
SEMICONDUCTOR MATERIALS
STRESS RELAXATION