Skip to main content

Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Journal Article · Mon Apr 14 00:00:00 EDT 2003 · Physical Review, B: Condensed Matter

DOI:https://doi.org/10.1103/PhysRevB.68.115204· OSTI ID:821742

Azevedo, G de M. ^[1]; Glover, C J; Ridgway, M C; Yu, K M; Foran, G J

LBNL Library

No abstract prepared.

Print

Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 821742

Report Number(s):: LBNL--54650

Journal Information:: Physical Review, B: Condensed Matter, Journal Name: Physical Review, B: Condensed Matter Vol. 68; ISSN PRBMDO; ISSN 0163-1829

Country of Publication:: United States

Language:: English

Similar Records

Direct evidence of defect annihilation during structural relaxation of amorphous indium phosphide

Journal Article · Mon Apr 14 00:00:00 EDT 2003 · Physical Review, B: Condensed Matter · OSTI ID:821770

Direct observation of structural relaxation in amorphous compound semiconductors

Journal Article · Thu May 01 00:00:00 EDT 2003 · Nuclear Instruments and Methods in Physics Research, Section B · OSTI ID:821741

Direct observation of structural relaxation in amorphous compound semiconductors

Journal Article · Tue Dec 31 23:00:00 EST 2002 · Nuclear Instruments and Methods in Physics Research B · OSTI ID:831554

Related Subjects

73 NUCLEAR PHYSICS AND RADIATION PHYSICS
ANNIHILATION
DEFECTS
INDIUM PHOSPHIDES
RELAXATION