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Interfacial reactions during GaN and AlN epitaxy on 4H and 6H-SiC (0001),

Journal Article · Sat Oct 15 04:00:00 EDT 2005 · Applied Physics Letters

OSTI ID:841850

Losurdo, M ^[1]; Capezzuto, P; Bruno, G; Brown, A; Kim, T H; Yi, Ch; Zakharov, D N; Liliental-Weber, Z

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Research Organization:: Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 841850

Report Number(s):: LBNL--58223

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1-3 Vol. 86; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
CHEMICAL REACTIONS
EPITAXY
GALLIUM NITRIDES
HYDRATES
INTERFACES
SILICON CARBIDES