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Title: Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering

Abstract

We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.

Authors:
Publication Date:
Research Org.:
SLAC National Accelerator Lab., Menlo Park, CA (United States)
Sponsoring Org.:
USDOE Office of Science (SC)
OSTI Identifier:
839624
Report Number(s):
SLAC-PUB-10845
TRN: US200516%%296
DOE Contract Number:  
AC02-76SF00515
Resource Type:
Technical Report
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COPPER; ELECTRIC CONDUCTIVITY; GRAIN REFINEMENT; ION BEAMS; MAGNETRONS; MICROSTRUCTURE; ROUGHNESS; SPUTTERING; THIN FILMS; ENERGY BEAM DEPOSITION

Citation Formats

Prater, W. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering. United States: N. p., 2004. Web. doi:10.2172/839624.
Prater, W. Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering. United States. https://doi.org/10.2172/839624
Prater, W. 2004. "Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering". United States. https://doi.org/10.2172/839624. https://www.osti.gov/servlets/purl/839624.
@article{osti_839624,
title = {Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering},
author = {Prater, W},
abstractNote = {We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.},
doi = {10.2172/839624},
url = {https://www.osti.gov/biblio/839624}, journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Nov 04 00:00:00 EST 2004},
month = {Thu Nov 04 00:00:00 EST 2004}
}