Microstructural Comparisons of Ultra-Thin Cu Films Deposited by Ion-Beam and dc-Magnetron Sputtering
- SLAC
We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6% to 10% for ion beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron deposited films are smoother. The dc-magnetron produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.
- Research Organization:
- Stanford Linear Accelerator Center (SLAC), Menlo Park, CA
- Sponsoring Organization:
- SC
- DOE Contract Number:
- AC02-76SF00515
- OSTI ID:
- 839624
- Report Number(s):
- SLAC-PUB-10845
- Country of Publication:
- United States
- Language:
- English
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