Microstructural comparisons of ultrathin Cu films deposited by ion-beam and dc-magnetron sputtering
- Chemical and Materials Engineering Department, San Jose State University, One Washington Square, San Jose, California 95192 (United States)
We report and contrast both the electrical resistance and the microstructure of copper thin films deposited in an oxygen-containing atmosphere by ion-beam and dc-magnetron sputtering. For films with thicknesses of 5 nm or less, the resistivity of the Cu films is minimized at oxygen concentrations ranging from 0.2% to 1% for dc-magnetron sputtering and 6%-10% for ion-beam sputtering. Films sputtered under both conditions show a similar decrease of interface roughness with increasing oxygen concentration, although the magnetron-deposited films are smoother. The dc-magnetron-produced films have higher resistivity, have smaller Cu grains, and contain a higher concentration of cuprous oxide particles. We discuss the mechanisms leading to the grain refinement and the consequent reduced resistivity in both types of films.
- OSTI ID:
- 20713902
- Journal Information:
- Journal of Applied Physics, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.1886275; (c) 2005 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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