Deposition mechanism of silicon nitride in direct photoassisted chemical vapor deposition using a low-pressure Hg lamp

Journal Article · Thu Jun 01 04:00:00 EDT 1995 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.2044226· OSTI ID:82927

Yoshimoto, Masahiro; Takubo, Kenji; Ohtsuki, Tetsuya; Komoda, Michio; Matsunami, Hiroyuki ^[1]

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1. Kyoto Univ. (Japan). Dept. of Electrical Engineering

Silicon nitride (SiN{sub x}) films applicable to microelectronics are deposited by photoassisted chemical vapor deposition (CVD) with a low-pressure Hg lamp (185 nm). The authors describe the deposition mechanism of SiN{sub x} in the photo-CVD based on analyses of film structures and transient mass spectroscopy. NH{sub 3} is decomposed into NH{sub 2} and H by UV-light irradiation. SiH{sub 4} is decomposed through the reaction with NH{sub 2} or H. SiN{sub x} films are formed through an intermediate species formed in gas phase. The formation of the intermediate species is controlled by the decomposition of NH{sub 3}. At a substrate temperature of 350 C, the deposition rate is controlled by the amount of the intermediate species with higher mass (amu 77, Si{sub 2}NH{sub 7}), and the films are polymeric solids. At 500 C, chemical species are deposited on the surface before they grow into the intermediate species with the high mass (amu 77), and the film structure becomes stoichiometric SiN{sub x}.

• Sponsoring Organization: USDOE
• OSTI ID: 82927
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 6 Vol. 142; ISSN 0013-4651; ISSN JESOAN
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMMONIA
CHEMICAL REACTION KINETICS
CHEMICAL VAPOR DEPOSITION
DECOMPOSITION
SILANES
SILICON NITRIDES
ULTRAVIOLET RADIATION