Radical and electron densities in a high plasma density-chemical vapor deposition reactor from a three-dimensional simulation

Journal Article · Mon Feb 01 04:00:00 EST 1999 · IEEE Transactions on Plasma Science

DOI:https://doi.org/10.1109/27.763037· OSTI ID:357672

Keiter, E R ^[1]; Kushner, M J ^[2]

---

1. Sandia National Labs., Albuquerque, NM (United States)
2. Univ. of Illinois, Urbana, IL (United States). Dept. of Electrical and Computer Engineering

High plasma density chemical vapor deposition (HPD-CVD) is being developed for producing interlevel dielectrics in microelectronics fabrication. The authors present images of radical and electron densities in an Ar/SiH{sub 4} HPD-CVD inductively coupled reactor produced by a three-dimensional equipment model. The silane feedstock and silyl (SiH{sub 3}) radicals are rapidly dissociated, resulting in densities which are maximum near the nozzles. The silylene (SiH{sub 2}) radicals, the most fragmented species included in the simulation, are the most uniformly distributed.

• Sponsoring Organization: National Science Foundation, Washington, DC (United States)
• OSTI ID: 357672
• Journal Information: IEEE Transactions on Plasma Science, Journal Name: IEEE Transactions on Plasma Science Journal Issue: 1 Vol. 27; ISSN ITPSBD; ISSN 0093-3813
• Country of Publication: United States
• Language: English

Related Subjects

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATION
42 ENGINEERING
ARGON
CHEMICAL REACTORS
CHEMICAL VAPOR DEPOSITION
ELECTRIC DISCHARGES
ELECTRON DENSITY
ION DENSITY
MICROELECTRONIC CIRCUITS
PLASMA SIMULATION
SILANES
THREE-DIMENSIONAL CALCULATIONS