The low-temperature a-SiN{sub x} films with high impermeability and high optical gap with application to organic light-emitting diode

Journal Article · Sat Oct 15 04:00:00 EDT 2005 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2089161· OSTI ID:20719584

Chang, H -Y; Meng, C -Y; Huang, C -W; Lee, S -C ^[1]

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1. Department of Electrical Engineering, Graduate Institute of Electronics Engineering, National Taiwan University, Taipei 10699, Taiwan (China)

A low-temperature passivation layer (IE100 deg. C) with high impermeability and a high optical gap is required in top-emitting organic light-emitting diodes. Hydrogenated amorphous silicon nitride (a-SiN{sub x}:H) films fabricated by the plasma-enhanced chemical-vapor deposition of SiH{sub 4}+NH{sub 3}+N{sub 2} at 100 deg. C fulfill this requirement. Infrared-absorption spectroscopy was used to monitor the permeability of the a-SiN{sub x}:H film. The optimum a-SiN{sub x}:H film with an optical gap of 3.1 eV was fabricated at a gas ratio of SiH{sub 4}:NH{sub 3}:N{sub 2}=10:3:197 SCCM. The main absorption peaks of the a-SiN{sub x}:H films deposited at 70 deg. C did not change at all, even following a 3000-h-long storage test.

• OSTI ID: 20719584
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 8 Vol. 98; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTROSCOPY
AMMONIA
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
EV RANGE 01-10
HYDROGEN
INFRARED SPECTRA
LAYERS
LIGHT EMITTING DIODES
PASSIVATION
PERMEABILITY
PLASMA
SILANES
SILICON NITRIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS